Ushio Opto-Semiconductors, Inc. has developed a 660nm laser diode that produces an output power of 200mW CW / 400mW pulsed, offering precision control for industrial applications.
This product will be the first high power laser diode to offer a built-in monitoring photodiode at the lasing wavelength. Its unique design will enable system engineers to monitor the photodiode current and adjust power variants and temperature, enabling accurate control and stable performance.
UOS is evolving technology for customer needs. Our laser diodes are high-power and high-efficiency, so they can be run longer while maintaining consistent output power. The reduction of heat generation allows for a more compact cooling system, and low power consumption supports remote applications such as leveling and distance measuring.
Features & Benefits
- High output power (200mW CW, 400mW pulsed)
- High reliability
- Longer lifetime (MTTF 10,000h)
- Stable performance through built-in monitoring photodiode
- Sensing
- Photoelectric sensor
- Distance measurement
- Time of flight sensor (TOF)
- Machine vision
- 2D/3D Scanning
- Bio-medical
- Genetic testing / Flow cytometry
