Ushio America InGaAs PIN Photodiodes 45 micron

We offer PD-LD InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity between 1100 nm and 1650 nm, with the highest performance between 1550 nm and 1625 nm. These semiconductors are selected for their low dark current values and inherently low capacitance. The semiconductor structure and pigtailing process ensures low Polarization-Dependent loss so that fiber movement and twisting will not significantly affect the assembliesÕ responsivity .