Ushio America InGaAs APD 55 micron

Ushio America

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UAI-InGaAs APD 55 micron
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Ushio America InGaAs APD 55 micron

We offer low noise, high-responsivity PD-LD InGaAs Avalanche Photo Diodes (APDs) in convenient fiber-coupled packages. These assemblies incorporate top-illuminated 55 micron diameter active area APDs that responds optimally to both 1310 and 1550 nm light sources .

Each module contains a semiconductor whose bandwidth is ideally suited to industry standard transmission rates from DC to 2.5 GHz. The planar fabrication techniques used to create these semiconductors make them optimal for applications demanding high reliability receivers. For optimal performance with gains on the order of 10 to 15 they should be operated at voltage biases below breakdown.

These high reliability units may be operated and stored between Ð40 and 85¡C.

These modules are available with either bare or connectorized fiber pigtails or in receptacle style housings suitable for board or panel mounting. Receptacle mounted APDs are not available with LBR feature.



Features & Benefits

  • SONET/SDH
  • FTTH
  • ONU Nodes
  • High Frequency Test Equipment
  • Low light receivers
  • InGaAs APD
  • High Responsivity
  • Low capacitance receivers
  • High Gain, low Noise
  • -40 to 85¼C Operating Range
  • FC, ST ,SC Receptacle Housing
  • Pigtailed w/9/125 _m Fiber


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